View upa807t t84 sot363 datasheet:

DATA SHEET SILICON TRANSISTOR µPA807T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD FEATURES PACKAGE DRAWINGS • Low Current, High Gain (Unit: mm) |S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz 2.1±0.1 |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz 1.25±0.1 • A Super Mini Mold Package Adopted • Built-in 2 Transistors (2 ? 2SC5179) ORDERING INFORMATION PART NUMBER QUANTITY PACKING STYLE µPA807T Loose products Embossed tape 8 mm wide. Pin 6 (50 PCS) (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) face to perforation µPA807T-T1 Taping products side of the tape. (3 KPCS/Reel) Remark If you require an evaluation sample, please contact an NEC Sales Representative. (Unit sample quantity is 50 pcs.) PI