View upa814 88t sot363 datasheet:

PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA814T MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR ? (WITH BUILT-IN 2 ? ? 2SC5193) SMALL MINI MOLD ? ? FEATURES PACKAGE DRAWINGS • Low Voltage Operation, Low Phase Distortion (Unit: mm) • Low Noise 2.1 ±0.1 NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz 1.25 ±0.1 NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz • Large Absolute Maximum Collector Current IC = 100 mA • A Small Mini Mold Package Adopted • Built-in 2 Transistors (2 ? 2SC5193) ORDERING INFORMATION PART NUMBER QUANTITY PACKING STYLE µPA814T Loose products Embossed tape 8 mm wide. Pin 6 (Q1 (50 PCS) Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter) face to perforation side of the tape. µPA814T-T1 Taping products (3 KPCS/Reel) Remark If you