View 2sc1318a e datasheet:

Transistor 2SC1318A Silicon NPN epitaxial planer type For low-frequency driver amplification Unit: mm Complementary to 2SA720A 5.0± 0.2 4.0± 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 –0.1 0.45 –0.1 Collector to base voltage VCBO 80 V 1.27 1.27 Collector to emitter voltage VCEO 70 V Emitter to base voltage VEBO 5 V 1 2 3 1:Emitter Peak collector current ICP 1 A 2:Collector Collector current IC 0.5 A 3:Base 2.54± 0.15 JEDEC:TO–92 Collector power dissipation PC 750 mW EIAJ:SC–43A Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Paramete