View 2sc1359 e datasheet:

Transistor 2SC1359 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SA838 5.0± 0.2 4.0± 0.2 Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 –0.1 0.45 –0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 5 V Collector current IC 30 mA 1 2 3 1:Emitter Collector power dissipation PC 400 mW 2:Collector 3:Base 2.54± 0.15 Junction temperature Tj 150 ?C JEDEC:TO–92 Storage temperature Tstg –55 ~ +150 ?C EIAJ:SC–43A Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 10V, IE = 0