View 2sc1360 e datasheet:

Transistor 2SC1360, 2SC1360A Silicon NPN epitaxial planer type For intermadiate frequency amplification of TV image Unit: mm 5.9± 0.2 4.9± 0.2 Features High transition frequency fT. Large collector power dissipation PC. 0.7± 0.1 Absolute Maximum Ratings (Ta=25?C) 2.54± 0.15 Parameter Symbol Ratings Unit Collector to 2SC1360 50 VCBO V base voltage 2SC1360A 60 Collector to 2SC1360 45 VCEO V +0.2 +0.2 emitter voltage 2SC1360A 60 0.45–0.1 0.45–0.1 1.27 1.27 Emitter to base voltage VEBO 4 V 1:Emitter Collector current IC 50 mA 2:Collector 1 2 3 3:Base Collector power dissipation PC 1 W EIAJ:SC–51 Junction temperature Tj 150 ?C TO–92L Package Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit C