View 2sc1383 e datasheet:

Transistor 2SC1383, 2SC1384 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Unit: mm Complementary to 2SA683 and 2SA684 5.9± 0.2 4.9± 0.2 Features Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA683 and 2SA684. 0.7± 0.1 Absolute Maximum Ratings (Ta=25?C) 2.54± 0.15 Parameter Symbol Ratings Unit Collector to 2SC1383 30 VCBO V base voltage 2SC1384 60 Collector to 2SC1383 25 VCEO V +0.2 +0.2 emitter voltage 2SC1384 50 0.45–0.1 0.45–0.1 1.27 1.27 Emitter to base voltage VEBO 5 V 1:Emitter Peak collector current ICP 1.5 A 2:Collector 1 2 3 3:Base Collector current IC 1 A EIAJ:SC–51 Collector power dissipation PC 1 W TO–92L Package Junction temperature Tj 150 ?C Storage temperature T