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View 2sc1518 e datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc1518_e

Transistor 2SC1518 Silicon NPN epitaxial planer type For high-frequency bias oscillation of tape recorders Unit: mm For DC-DC converter 5.9± 0.2 4.9± 0.2 Features Low collector to emitter saturation voltage VCE(sat). Satisfactory operation performances and high efficiency with a low-voltage power supply. 0.7± 0.1 2.54± 0.15 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 25 V Collector to emitter voltage VCEO 20 V +0.2 +0.2 0.45–0.1 0.45–0.1 1.27 1.27 Emitter to base voltage VEBO 5 V 1:Emitter Peak collector current ICP 1.5 A 2:Collector 1 2 3 3:Base Collector current IC 1 A EIAJ:SC–51 Collector power dissipation PC 1 W TO–92L Package Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C Electri

Keywords

 2sc1518 e Datasheet, Design, MOSFET, Power

 2sc1518 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sc1518 e Database, Innovation, IC, Electricity

 

 
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