View 2sc1688 e datasheet:

Transistor 2SC1688 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 5.0± 0.2 4.0± 0.2 Features Small common emitter reverse transfer capacitance Cre. High transition frequency fT. Center at the emitter pin. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 –0.1 0.45 –0.1 Collector to base voltage VCBO 50 V 1.27 1.27 Collector to emitter voltage VCEO 40 V Emitter to base voltage VEBO 4 V 1 2 3 1:Collector Collector current IC 30 mA 2:Emitter Collector power dissipation PC 400 mW 3:Base 2.54± 0.15 JEDEC:TO–92 Junction temperature Tj 150 ?C EIAJ:SC–43A Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB =