View 2sc1980 e datasheet:

Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Unit: mm Complementary to 2SA921 5.0± 0.2 4.0± 0.2 Features High collector to emitter voltage VCEO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V +0.2 +0.2 0.45 –0.1 0.45 –0.1 Collector to emitter voltage VCEO 120 V 1.27 1.27 Emitter to base voltage VEBO 7 V Peak collector current ICP 50 mA 1 2 3 1:Emitter Collector current IC 20 mA 2:Collector 3:Base Collector power dissipation PC 250 mW 2.54± 0.15 JEDEC:TO–92 Junction temperature Tj 150 ?C EIAJ:SC–43A Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Conditions min typ max Unit ICBO VCB