View 2sc2206 e datasheet:

Transistor 2SC2206 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SA1254 6.9± 0.1 2.5± 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Optimum for RF amplification of FM/AM radios. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55± 0.1 0.45± 0.05 Absolute Maximum Ratings (Ta=25?C) 3 2 1 Parameter Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V 2.5 2.5 Emitter to base voltage CEBO 5 V Collector current IC 30 mA 1:Base 2:Collector EIAJ:SC–71 Collector power dissipation PC 400 mW 3:Emitter M Type Mold Package Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C