View 2sc2290 datasheet:

2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) Unit in mm Specified 12.5V, 28MHz Characteristics Output Power : Po = 60W (Min.) PEP Power Gain : Gp = 11.8dB (Min.) Collector Efficiency : ?C = 35% (Min.) Intermodulation Distortion: IMD = -30dB (Max.) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 45 V Collector-Emitter Voltage VCES 45 V Collector-Emitter Voltage VCEO 18 V Emitter-Base Voltage VEBO 4 V Collector Current IC 20 A Collector Power Dissipation PC 175 W JEDEC — Junction Temperature Tj 175 °C EIAJ — Storage Temperature Range Tstg -65~175 °C TOSHIBA 2-13B1A Weight: 5.2g 000707EAA1 • TOSHIBA is co