View 2sc2295 e datasheet:

Transistor 2SC2295 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SA1022 +0.2 2.8 –0.3 +0.25 Features 0.65± 0.15 1.5 –0.05 0.65± 0.15 Optimum for RF amplification of FM/AM radios. High transition frequency fT. 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3 packing. 2 Absolute Maximum Ratings (Ta=25?C) 0.1 to 0.3 Parameter Symbol Ratings Unit 0.4± 0.2 Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage CEBO 5 V 1:Base JEDEC:TO–236 2:Emitter EIAJ:SC–59 Collector current IC 30 mA 3:Collector Mini Type Package Collector power dissipation PC 200 mW Junction temperature Tj 150 ?C Marking symbo