View 2sc2510 datasheet:

2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) Unit in mm Specified 28V, 28MHz Characteristics Output Power : Po = 150W (Min.) PEP Power Gain : Gp = 12.2dB (Min.) Collector Efficiency : ?C = 35% (Min.) Intermodulation Distortion: IMD = -30dB (Max.) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCES 60 V Collector-Emitter Voltage VCEO 35 V Emitter-Base Voltage VEBO 4 V Collector Current IC 20 A JEDEC — Collector Power Dissipation PC 250 W EIAJ — Junction Temperature Tj 175 °C TOSHIBA 2-13B1A Storage Temperature Range Tstg -65~175 °C Weight: 5.2g 000707EAA1 • TOSHIBA is con