View 2sc2551 datasheet:

2SC2551 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2551 Industrial Applications Hight Voltage Control Applications Unit: mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = 300 V, V = 300 V CEO • Low saturation voltage: V = 0.5 V (max) CE (sat) • Small collector output capacitance: C = 3 pF (typ.) ob • Complementary to 2SA1091. Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 300 V Collector-emitter voltage VCEO 300 V Emitter-base voltage VEBO 6 V Collector current IC 100 mA Base current IB 20 mA JEDEC TO-92 Collector power dissipation PC 400 mW JEITA SC-43 Junction temperature Tj 150 °C TOSHIBA 2-5F1B Storage