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View 2sc2631 e datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc2631_e

Transistor 2SC2631 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit: mm Complementary to 2SA1123 5.0± 0.2 4.0± 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 –0.1 0.45 –0.1 Collector to base voltage VCBO 150 V 1.27 1.27 Collector to emitter voltage VCEO 150 V Emitter to base voltage VEBO 5 V 1 2 3 1:Emitter Peak collector current ICP 100 mA 2:Collector Collector current IC 50 mA 3:Base 2.54± 0.15 JEDEC:TO–92 Collector power dissipation PC 750 mW EIAJ:SC–43A Junction temperature Tj 150 ?C Storage temperature Tstg –55 ~ +150 ?C Elect

Keywords

 2sc2631 e Datasheet, Design, MOSFET, Power

 2sc2631 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sc2631 e Database, Innovation, IC, Electricity

 

 
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