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View 2sc2636 e datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc2636_e

Transistor 2SC2636 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation Unit: mm 6.9± 0.1 2.5± 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maximum Ratings (Ta=25?C) 0.55± 0.1 0.45± 0.05 Parameter Symbol Ratings Unit 3 2 1 Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3 V 2.5 2.5 Collector current IC 50 mA Collector power dissipation PC 400 mW 1:Base 2:Collector EIAJ:SC–71 Junction temperature Tj 150 ?C 3:Emitter M Type Mold Package Storage temperature Tstg –55 ~ +150 ?C Electrical Characteristics (Ta=25?C) Parameter Symbol Con

Keywords

 2sc2636 e Datasheet, Design, MOSFET, Power

 2sc2636 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sc2636 e Database, Innovation, IC, Electricity

 

 
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