View 2sc2712 datasheet:

2SC2712 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2712 Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage and high current: VCEO = 50 V, IC = 150 mA (max) • Excellent h linearity : h (I = 0.1 mA)/ h (I = 2 mA) FE FE C FE C = 0.95 (typ.) • High hFE: hFE = 70~700 • Low noise: NF = 1dB (typ.), 10dB (max) • Complementary to 2SA1162 • Small package Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 150 mA Base current IB 30 mA JEDEC TO-236MOD Collector power dissipation PC 150 mW JEITA SC-59 Junction temperature Tj 125 °C TOSHIBA 2-3F1A Storage temperature range Tstg -5