View 2sc2714 datasheet:

2SC2714 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2714 High Frequency Amplifier Applications Unit: mm FM, RF, MIX,IF Amplifier Applications • Small reverse transfer capacitance: Cre = 0.7 pF (typ.) • Low noise figure: NF = 2.5dB (typ.) (f = 100 MHz) Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 4 V Collector current IC 20 mA Base current IB 4 mA Collector power dissipation PC 100 mW Junction temperature Tj 125 °C JEDEC ? Storage temperature range Tstg -55~125 °C JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max