View 2sc2716 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
2SC2716 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2716 High Frequency Amplifier Applications Unit: mm AM High Frequency Amplifier Applications AM Frequency Converter Applications • Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 4 V Collector current IC 100 mA Emitter current IE -100 mA Collector power dissipation PC 150 wW Junction temperature Tj 125 °C JEDEC ? Storage temperature range Tstg -55~125 °C JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut
Keywords
2sc2716 Datasheet, Design, MOSFET, Power
2sc2716 RoHS, Compliant, Service, Triacs, Semiconductor
2sc2716 Database, Innovation, IC, Electricity
