View 2sc2753 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
2SC2753 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2753 VHF~UHF Band Low Noise Amplifier Application Unit: mm • Low noise figure, high gain • NF = 1.5dB, |S |2 = 16dB (f = 500 MHz) 21e • NF = 1.7dB, |S |2 = 10.5dB (f = 1 GHz) 21e Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 17 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3 V Collector current IC 70 mA Base current IB 30 mA Collector power dissipation PC 300 mW Junction temperature Tj 150 °C Storage temperature range Tstg -55~125 °C JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1E Weight: 0.21 g (typ.) Microwave Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT
Keywords
2sc2753 Datasheet, Design, MOSFET, Power
2sc2753 RoHS, Compliant, Service, Triacs, Semiconductor
2sc2753 Database, Innovation, IC, Electricity
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