View 2sc2782 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
2SC2782 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2782 VHF BAND POWER AMPLIFIER APPLICATIONS Unit in mm Output Power : Po = 80W (Min.) (f = 175MHz, VCC = 12.5V, Pi = 18W) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 36 V Collector-Emitter Voltage VCEO 16 V Emitter-Base Voltage VEBO 4 V Collector Current IC 20 A Collector Power Dissipation PC 220 W Junction Temperature Tj 175 °C Storage Temperature Range Tstg -65~175 °C JEDEC — EIAJ — TOSHIBA 2-13C1A Weight: 5.5g 000707EAA1 • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to p
Keywords
2sc2782 Datasheet, Design, MOSFET, Power
2sc2782 RoHS, Compliant, Service, Triacs, Semiconductor
2sc2782 Database, Innovation, IC, Electricity
