View 2sc2812n datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number : ENN7198 2SA1179N / 2SC2812N PNP / NPN Epitaxial Planar Silicon Transistors 2SA1179N / 2SC2812N Low-Frequency General-Purpose Amp Applications Features Package Dimensions • Miniature package facilitates miniaturization in end unit : mm products. 2204 • High breakdown voltage. [2SA1179N / 2SC2812N] 0.42 0.131 3 0 ‘0.1 1 2 0.95 0.95 1.9 1 : Base 2.92 2 : Emitter 3 : Collector SANYO : CPA Specifications ( ) : 2SA1179N Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)55 V Collector-to-Emitter Voltage VCEO (--)50 V Emitter-to-Base Voltage VEBO (--)5 V Collector Current IC (--)150 mA Collector Current (Pulse) ICP (--)300 mA Base Current IB (--)30 mA Collector Dissipation PC 200 mW
Keywords
2sc2812n Datasheet, Design, MOSFET, Power
2sc2812n RoHS, Compliant, Service, Triacs, Semiconductor
2sc2812n Database, Innovation, IC, Electricity
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