View 2sc2814 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Ordering number:EN693F NPN Epitaxial Planar Silicon Transistor 2SC2814 High-Friquency General-Purpose Amplifier Applications Features Package Dimensions · Very small package enabiling compactness and unit:mm slimness of sets. 2018A · High fT and small cre (fT=320MHz typ, cre=0.95pF [2SC2814] typ). C : Collector B : Base E : Emitter SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 30 V Collector-to-Emitter Voltage VCEO 20 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 30 mA Collector Dissipation PC 150 mW Junction Temperature Tj 125 ?C Storage Temperature Tstg –55 to +125 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ ma
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2sc2814 Datasheet, Design, MOSFET, Power
2sc2814 RoHS, Compliant, Service, Triacs, Semiconductor
2sc2814 Database, Innovation, IC, Electricity
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