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2sc2880

2SC2880 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC2880 High Voltage Switching Applications Unit: mm High voltage: VCEO = 150 V High transition frequency: f = 120 MHz T Small flat package P = 1.0 to 2.0 W (mounted on ceramic substrate) C Complementary to 2SA1200 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-ba

Keywords

 2sc2880 Datasheet, Design, MOSFET, Power

 2sc2880 RoHS, Compliant, Service, Triacs, Semiconductor

 2sc2880 Database, Innovation, IC, Electricity

 

 
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