View 2sc2881 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
2SC2881 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2881 Voltage Amplifier Applications Unit: mm Power Amplifier Applications High voltage: VCEO = 120 V High transition frequency: f = 120 MHz (typ.) T Small flat package P C = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SA1201 Maximum Ratings (Ta = 25C) Characteristics Symbo
Keywords
2sc2881 Datasheet, Design, MOSFET, Power
2sc2881 RoHS, Compliant, Service, Triacs, Semiconductor
2sc2881 Database, Innovation, IC, Electricity
