View 2sc3011 datasheet:

2SC3011 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC3011 UHF~C Band Low Noise Amplifier Applications Unit: mm • High gain: |S21e|2 = 12dB (typ.) • Low noise figure: NF = 2.3dB (typ.), f = 1 GHz • High fT: f = 6.5 GHz T Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 7 V Emitter-base voltage VEBO 3 V Collector current IC 30 mA Emitter current IE 10 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 °C Storage temperature range Tstg -55~125 °C JEDEC ? JEITA SC-59 TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Microwave Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. Max Unit Transition frequency fT VCE = 5 V, IC