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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc3069

Ordering number:EN934G NPN Epitaxial Planar Silicon Transistor 2SC3069 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions · Low-frequency, general-purpose amplifier., various unit:mm drivers, muting circuit. 2003A [2SC3069] Features · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max). · High VEBO (VEBO? 15V). B : Base JEDEC : TO-92 C : Collector EIAJ : SC-43 E : Emitter SANYO : NP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 60 V Collector-to-Emitter Voltage VCEO 50 V Emitter-to-Base Voltage VEBO 15 V Collector Current IC 200 mA Collector Current (Pulse) ICP 300 mA Base Current I

Keywords

 2sc3069 Datasheet, Design, MOSFET, Power

 2sc3069 RoHS, Compliant, Service, Triacs, Semiconductor

 2sc3069 Database, Innovation, IC, Electricity

 

 
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