View 2sc3070 datasheet:

Ordering number:EN923G NPN Epitaxial Planar Silicon Transistor 2SC3070 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions · Low-frequency, general-purpose amplifier., various unit:mm drivers, muting circuit. 2006A [2SC3070] Features · High DC current gain (hFE=800 to 3200). · Large current capacity (IC=1.2A). · Low collector-to-emitter saturation voltage (VCE(sat)=0.5V max). · High VEBO (VEBO? 15V). B : Base C : Collector EIAJ : SC-51 E : Emitter SANYO : MP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 30 V Collector-to-Emitter Voltage VCEO 25 V Emitter-to-Base Voltage VEBO 15 V Collector Current IC 1.2 A Collector Current (Pulse) ICP