View 2sc3072 datasheet:

2SC3072 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3072 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications • High DC current gain : h = 140 to 450 (V = 2 V, I = 0.5 A) FE CE C : h = 70 (min) (V = 2 V, I = 4 A) FE CE C • Low collector saturation voltage : V = 1.0 V (max) (I = 4 A, I = 0.1 A) CE (sat) C B • High power dissipation : P = 10 W (Tc = 25°C), P = 1.0 W (Ta = 25°C) C C Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V VCES 40 Collector-emitter voltage V VCEO 20 Emitter-base voltage VEBO 8 V JEDEC ? DC IC 5 JEITA ? Collector current A Pulse ICP 8 TOSHIBA 2-7B1A (Note 1) Weight: 0.36 g (typ.) Base current IB 0.5 A Ta = 25°C 1.0 Collector power