View 2sc3074 datasheet:

2SC3074 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3074 High Current Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (I = 3 A) C • High speed switching time: t = 1.0 µs (typ) stg • Complementary to 2SA1244 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 5 A Base current IB 1 A Ta = 25°C 1.0 Collector power PC W dissipation Tc = 25°C 20 Junction temperature Tj 150 °C JEDEC ? Storage temperature range Tstg -55 to 150 °C JEITA ? TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC ? JEITA ? TOSHIBA 2-7J1A Weight: 0.36 g (typ.) 1 2002-07-23 2SC3074 E