View 2sc3076 datasheet:

2SC3076 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3076 Power Amplifier Applications Unit: mm Power Switching Applications • Low collector saturation voltage: VCE (sat) = 0.5 V (max) (I = 1 A) C • Excellent switching time: t = 1.0 µs (typ.) stg • Complementary to 2SA1241 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current IC 2 A Base current IB 1 A Ta = 25°C 1.0 Collector power PC W dissipation Tc = 25°C 10 JEDEC ? Junction temperature Tj 150 °C JEITA ? Storage temperature range Tstg -55 to 150 °C TOSHIBA 2-7B1A Weight: 0.36 g (typ.) JEDEC ? JEITA ? TOSHIBA 2-7J1A Weight: 0.36 g (typ.) 1 2