View 2sc3135 datasheet:

Ordering number:EN1049D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1253/2SC3135 High-hFE, AF Amp Applications Features Package Dimensions · High VEBO. unit:mm · Wide ASO and high durability against breakdown. 2033 [2SA1253/2SC3135] B : Base C : Collector E : Emitter ( ) : 2SA1253 SANYO : SPA Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–)60 V Collector-to-Emitter Voltage VCEO (–)50 V Emitter-to-Base Voltage VEBO (–)15 V Collector Current IC (–)200 mA Collector Current (Pulse) ICP (–)400 mA Collector Dissipation PC 250 mW Junction Temperature Tj 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit mi