View 2sc3138 datasheet:

2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3138 High Voltage Switching Applications Unit: mm • High voltage: VCBO = 200 V (max) V = 200 V (max) CEO • Small flat package • Complementary to 2SA1255 Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 200 V Collector-emitter voltage VCEO 200 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA Base current IB 20 mA Collector power dissipation PC 150 mW Junction temperature Tj 125 °C JEDEC TO-236MOD Storage temperature range Tstg -55~125 °C JEITA SC-59 Marking TOSHIBA 2-3F1A Weight: 0.012 g (typ.) 1 2003-03-27 2SC3138 Electrical Characteristics (Ta = = 25°C) = = Characteristics Symbol Test Condition Min Typ. M