View 2sc3265 datasheet:

2SC3265 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3265 Low Frequency Power Amplifier Applications Unit: mm Power Switching Applications • High DC current gain: hFE (1) = 100~320 • Low saturation voltage: V = 0.4 V (max) CE (sat) (I = 500 mA, I = 20 mA) C B • Complementary to 2SA1298 Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 5 V Collector current IC 800 mA Base current IB 160 mA Collector power dissipation PC 200 mW JEDEC TO-236MOD Junction temperature Tj 150 °C JEITA SC-59 Storage temperature range Tstg -55~150 °C TOSHIBA 2-3F1A Weight: 0.012 g (typ.) Electrical Characteristics (Ta = = 25°C) = = Charact