All Transistors. Datasheet

 

View 2sc536n datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc536n

Ordering number:ENN6324 PNP/NPN Epitaxial Planar Silicon Transistors 2SA608N/2SC536N Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions · Capable of being used in the low frequency to high unit:mm frequency range. 2164 [2SA608N/2SC536N] 4.5 Features 3.7 3.5 · Large current capacity and wide ASO. 0.45 0.5 1.27 0.45 0.44 1 2 3 1 : Emitter 2.5 2.5 2 : Collector ( ) : 2SA608N 3 : Base SANYO : NPA-WA Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–50)60 V Collector-to-Emitter Voltage VCEO (–)50 V Emitter-to-Base Voltage VEBO (–)6 V Collector Current IC (–)150 mA Collector Current (Pulse) ICP (–)400 mA Collector Dissipation PC 500 mW Junction Temper

Keywords

 2sc536n Datasheet, Design, MOSFET, Power

 2sc536n RoHS, Compliant, Service, Triacs, Semiconductor

 2sc536n Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.