View 2sc752tm datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
2SC752(G)TM TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC752(G)TM Ultra High Speed Switching Applications Unit: mm Computer, Counter Applications • High transition frequency: fT = 400 MHz (typ.) • Low saturation voltage: V = 0.3 V (max) CE (sat) • High speed switching time: t = 15 ns (typ.) stg Maximum Ratings (Ta = = 25°C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 5 V Collector current IC 200 mA Base current IB 40 mA Collector power dissipation PC 400 mW Junction temperature Tj 125 °C JEDEC TO-92 Storage temperature range Tstg -55~125 °C JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Electrical Characteristics (Ta = = 25°C) = = Charac
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2sc752tm Datasheet, Design, MOSFET, Power
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