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View 2sc829 e datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

2sc829_e

Transistor 2SC829 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 5.0 0.2 4.0 0.2 Features Optimum for RF amplification, oscillation, mixing, and IF stage of FM/AM radios. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20 V Em

Keywords

 2sc829 e Datasheet, Design, MOSFET, Power

 2sc829 e RoHS, Compliant, Service, Triacs, Semiconductor

 2sc829 e Database, Innovation, IC, Electricity

 

 
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