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3sk180

Ordering number:ENN2129B N-Channel Silicon MOSFET (Dual Gate) 3SK180 High-Frequency General-Purpose Amplifier Applications Applications Package Dimensions · FM tuners and VHF tuners. unit:mm 2046A Features [3SK180] 1.9 · High power gain and low noise figure. 0.95 0.95 · High forward transfer admittance. 0.4 0.16 4 3 0 to 0.1 1 2 0.6 0.95 0.85 1 : Drain 2.9 2 : Source 3 : Gate 1 4 : Gate 2 SANYO : CP4 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDS 15 V Gate1-to-Source Voltage VG1S ±7 V Gate2-to-Source Voltage VG2S ±7 V Drain Current ID 30 mA Allowable Power Dissipation PD 200 mW ?C Channel Temperature Tch 125 Storage Temperature Tstg –55 to +125 ?C Electrical Characteristics at

Keywords

 3sk180 Datasheet, Design, MOSFET, Power

 3sk180 RoHS, Compliant, Service, Triacs, Semiconductor

 3sk180 Database, Innovation, IC, Electricity

 

 
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