View 3sk227 datasheet:

High Frequency FETs 3SK227 3SK227 Silicon N-Channel 4-pin MOS Unit : mm For VHF amplification +0.2 2.8 –0.3 +0.2 0.65± 0.15 1.5 –0.3 0.65± 0.15 Features Low noise-figure (NF) 0.5R 4 1 Large power gain PG Downsizing of sets by mini power package and automatic insertion by taping/magazine packing are available. 3 2 Absolute Maximum Ratings (Ta = 25?C) 0.4± 0.2 Parameter Symbol Rating Unit 1 : Source 2 : Drain Drain-Source voltage VDS 15 V 3 : Gate 2 Gate 1-Source voltage VG1S ±8 V 4 : Gate 1 Mini Type Package (4-pin) Gate 2-Source voltage VG2S ±8 V Drain current ID ±30 mA Allowable power dissipation PD 200 mW Channel temperature Tch 150 ?C Storage temperature Tstg – 55 to +150 ?C Electrical Characteristics (Ta = 25?C) Parameter Symbol Condition Min Typ