View 3sk241 datasheet:

High Frequency FETs 3SK241 3SK241 GaAs N-Channel MES Unit : mm For VHF-UHF amplification +0.2 2.8 –0.3 +0.2 0.65± 0.15 1.5 –0.3 0.65± 0.15 Features Low noise-figure (NF) 0.5R 4 1 Large power gain PG Downsizing of sets by mini power package and automatic insertion by taping/magazine packing are available. 3 2 Absolute Maximum Ratings (Ta = 25?C) Parameter Symbol Rating Unit Drain-Source voltage VDS 13 V 0.4± 0.2 1 : Source Gate 1-Source voltage VG1S – 6 V 2 : Drain 3 : Gate 2 Gate 2-Source voltage VG2S – 6 V 4 : Gate 1 Drain current ID 50 mA Mini Type Package (4-pin) Gate 1 current IG1 1 mA Gate 2 current IG2 1 mA Allowable power dissipation PD 200 mW Channel temperature Tch 150 ?C Storage temperature Tstg – 55 to +150 ?C Electrical Characteristics (Ta