View 3sk248 datasheet:

Ordering number:ENN4540 N-Channel Enhancement Silicon MOSFET 3SK248 Muting/Switching Applications Features Package Dimensions · MOSFET with a back gate terminal. unit:mm · Enhancement type. 2100A · Small ON resistance. [3SK248] · Small-sized package permitting 3SK248-applied sets 1.9 to be made smaller and slimmer. 0.95 0.95 0.4 0.16 4 3 0 to 0.1 1 2 0.6 0.95 0.85 1 : Gate 2.9 2 : Source 3 : Drain 4 : Back Gate SANYO : CP4 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 10 V Gate-to-Source Voltage VGSS ±10 V Drain Current (DC) ID 100 mA Allowable Power Dissipation PD 200 mW Channel Temperature Tch 125 ?C Storage Temperature Tstg –55 to +125 ?C Electrical Characteristics at Ta