View 3sk269 datasheet:

High Frequency FETs 3SK269 3SK269 Silicon N-Channel 4-pin MOS Unit : mm For VHF amplification 2.1± 0.1 0.425 1.25± 0.1 0.425 Features Low noise-figure (NF) 32 Large power gain PG Downsizing of sets by S-mini power package and automatic insertion by taping/magazine packing are available. 41 Absolute Maximum Ratings (Ta = 25?C) 0.2± 0.1 Parameter Symbol Rating Unit 1 : Drain 2 : Source Drain-Source voltage VDS 15 V 3 : Gate 1 Gate 1-Source voltage VG1S ±8 V 4 : Gate 2 Gate 2-Source voltage VG2S ±8 V S-Mini Type Package (4-pin) Drain current ID ±30 mA Allowable power dissipation PD 150 mW Channel temperature Tch 150 ?C Storage temperature Tstg – 55 to +150 ?C Electrical Characteristics (Ta = 25?C) Parameter Symbol Condition Min Typ Max Unit Drain current ID