View 5hn01m datasheet:

Ordering number : ENN6136 5HN01M N-Channel Silicon MOSFET 5HN01M Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. unit : mm • Ultrahigh-speed switching. 2158 • 4V drive. [5HN01M] 0.3 0.15 3 0 to 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 : Gate 2 : Source 3 : Drain Specifications SANYO : MCP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 50 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID 0.1 A Drain Current (Pulse) IDP PW?10µs, duty cycle?1% 0.4 A Allowable Power Dissipation PD 0.15 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-