View 5hn01n datasheet:

Ordering number : ENN6638 5HN01N N-Channel Silicon MOSFET 5HN01N Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. unit : mm • Ultrahigh-speed switching. 2178 • 4V drive. 5.0 [5HN01N] 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 : Source 2 : Drain 3 : Gate Specifications 1.3 1.3 SANYO : NP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 50 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID 0.1 A Drain Current (Pulse) IDP PW?10µs, duty cycle?1% 0.4 A Allowable Power Dissipation PD 0.4 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source