View 5hn01sp datasheet:

Ordering number : ENN6639 5HN01SP N-Channel Silicon MOSFET 5HN01SP Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. unit : mm • Ultrahigh-speed switching. 2180 • 4V drive. [5HN01SP] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1.3 1.3 1 : Source 2 : Drain 3 : Gate Specifications 3.0 3.8nom Absolute Maximum Ratings at Ta=25°C SANYO : SPA Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 50 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID 0.1 A Drain Current (Pulse) IDP PW?10µs, duty cycle?1% 0.4 A Allowable Power Dissipation PD 0.25 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Electrical Characteristics at Ta=25°C Ratings Parameter Symbol Conditions Unit min typ max Dra