View 5hp02c datasheet:

Ordering number:ENN6424 P-Channel Silicon MOSFET 5HP02C Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. unit:mm · Ultrahigh-speed switching. 2091A · 4V drive. [5HP02C] 0.4 0.16 3 0 to 0.1 1 0.95 2 0.95 1.9 2.9 1 : Gate 2 : Source 3 : Drain SANYO : CP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS –50 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID –0.14 A Drain Current (pulse) IDP PW? 10µs, duty cycle? 1% –0.56 A Allowable Power Dissipation PD 0.25 W Channel Temperature Tch 150 ?C Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source