View 5hp02m datasheet:

Ordering number:ENN6131 P-Channel Silicon MOSFET 5HP02M Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON resistance. unit:mm · Ultrahigh-speed switching. 2158 · 4V drive. [5HP02M] 0.3 0.15 3 0 to 0.1 1 2 0.3 0.6 0.65 0.65 0.9 2.0 1 : Gate 2 : Source 3 : Drain SANYO : MCP3 Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS –50 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID –0.14 A Drain Current (pulse) IDP PW? 10µs, duty cycle? 1% –0.56 A Allowable Power Dissipation PD 0.15 W ?C Channel Temperature Tch 150 Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Drai