View 5hp02n datasheet:

Ordering number:ENN6530 P-Channel Silicon MOSFET 5HP02N Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON-resistance. unit:mm · Ultrahigh-speed switching. 2178 · 4V drive. [5HP02N] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 : Source 2 : Drain 3 : Gate 1.3 1.3 SANYO : NP Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS –50 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID –0.14 A Drain Current (pulse) IDP PW? 10µs, duty cycle? 1% –0.56 A Allowable Power Dissipation PD 0.4 W ?C Channel Temperature Tch 150 Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Sour