View 5hp02sp datasheet:

Ordering number:ENN6531 P-Channel Silicon MOSFET 5HP02SP Ultrahigh-Speed Switching Applications Features Package Dimensions · Low ON-resistance. unit:mm · Ultrahigh-speed switching. 2180 · 4V drive. [5HP02SP] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1.3 1.3 1 : Source 2 : Drain 3 : Gate 3.0 3.8nom SANYO : SPA Specifications Absolute Maximum Ratings at Ta = 25?C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS –50 V Gate-to-Source Voltage VGSS ±20 V Drain Current (DC) ID –0.14 A Drain Current (pulse) IDP PW? 10µs, duty cycle? 1% –0.56 A Allowable Power Dissipation PD 0.25 W ?C Channel Temperature Tch 150 Storage Temperature Tstg –55 to +150 ?C Electrical Characteristics at Ta = 25?C Ratings Parameter Symbol Conditions Unit min typ max Dra