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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

bat6407

BAT 64-07 Silicon Schottky Diodes Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration Package BAT 64-07 67s Q62702-A964 1 = C1 2 = C2 3 = A2 4 = A1 SOT-143 Maximum Ratings Parameter Symbol Values Unit Diode reverse voltage VR 40 V Forward current IF 250 mA Average forward current (50/60Hz, sinus) IFAV 120 Surge forward current (t ? 10ms) IFSM 800 Total Power dissipation Ptot mW TS = 61 °C 250 Junction temperature Tj 150 °C Storage temperature Tstg - 55 ... + 150 Thermal Resistance 1) Junction ambient RthJA ? 495 K/W Junction - soldering p

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 bat6407 Datasheet, Design, MOSFET, Power

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