View bat6407 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
BAT 64-07 Silicon Schottky Diodes Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration Package BAT 64-07 67s Q62702-A964 1 = C1 2 = C2 3 = A2 4 = A1 SOT-143 Maximum Ratings Parameter Symbol Values Unit Diode reverse voltage VR 40 V Forward current IF 250 mA Average forward current (50/60Hz, sinus) IFAV 120 Surge forward current (t ? 10ms) IFSM 800 Total Power dissipation Ptot mW TS = 61 °C 250 Junction temperature Tj 150 °C Storage temperature Tstg - 55 ... + 150 Thermal Resistance 1) Junction ambient RthJA ? 495 K/W Junction - soldering p
Keywords
bat6407 Datasheet, Design, MOSFET, Power
bat6407 RoHS, Compliant, Service, Triacs, Semiconductor
bat6407 Database, Innovation, IC, Electricity
LIST
Last Update
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet